News

Ultra-Low Resistance MOSFETs for Advanced Power Systems

2025-04-24

In the dynamic field of power electronics, Goford Semiconductor continues to set benchmarks with its advanced N-Channel MOSFET solutions. Designed for high efficiency and reliability, the latest Series leverages cutting-edge trench technology to deliver ultra-low on-resistance, rapid switching, and robust performance across industrial and automotive applications.



Product Highlights:

 Ultra-Low Loss Design: Industry-leading 0.73mΩ Rdson(GT013N04D5C) minimizes energy loss in motor drives & DC/DC converters.

 Rapid Switching for High-Frequency Applications: Optimized gate charge (Qg=88nC GT013N04D5C) and 13ns switching enable high-frequency performance in server power supplies & EV chargers.

 Enhanced Thermal Performance: 0.416°C/W thermal resistance ensures stable performance in compact renewable energy inverters & LED drivers.

 Versatile Packaging and Scalability: Available in compact DFN and TOLL packages, the series supports space-constrained layouts while ensuring high current density.


Product Parametrics:

Part NumberPackageESDVds(V)Id(A)

Rds(on)mΩ(typ)

@Vgs=10V

Rds(on)mΩ(max)

@Vgs=10V

Qg(nC)Ciss(pF)
GT011N08TLTOLL-8LNO803500.85
16313300
GT011N08TLATOLL-8LNO803830.85
16313300
GT015N06TLTOLL-8LNO603500.771.0415210694
GT015N06TLATOLL-8LNO603500.771.0415210694
GT013N04D5CHDFN5*6-8LNO402700.82
845300
GT013N04D5CDFN5*6-8LNO402700.731886100
GT014N04TLTOLL-8LNO402750.981.35946100
GT009N04D5DFN5*6-8LNO402800.75
1207318
GT009N04TLTOLL-8LNO403400.81
1207318
GT009N04TLATOLL-8LNO403400.81
1207318
GT007N04D5DFN5*6-8LNO403500.721.41257500
GT011N03D5EDFN5*6-8LYES302090.861.43985950
GT011N03TLETOLL-8LYES3025011.47986278


Applications:

    

                 Industrial Automation                                    Electric Vehicles (EVs)                                         Renewable Energy