200V TOLT MOSFET: Low Rds(on) 8mΩ, Super Compact
2025-03-21
In today's high-performance electronics landscape, power density and thermal efficiency are critical. Goford Semiconductor introduces the GT100N20TT, a 200V N-Channel MOSFET engineered for ultra-low Rds(on), top-side cooling, and super-compact TOLT packaging, delivering unmatched performance in space-constrained applications.
Product Highlights:
200V Voltage Rating: Robust performance for industrial and automotive power systems.
Ultra-Low Rds(on): As low as 10mΩ at VGS=10V, minimizing conduction losses and boosting efficiency.
Top-Side Cooling: Optimized thermal management via the TOLT-8L package, enabling direct heat dissipation from the top surface for improved reliability.
Super-Compact Design: Space-saving TOLTfootprint ideal for high-density PCB layouts.
High Current Capacity: Continuous drain current up to 130A for heavy-load applications.
Product Parametrics:
| Part Number | Package | ESD | Vds(V) | Id(A) | Rds(on)mΩ(typ) @Vgs=10V | Rds(on)mΩ(max)@Vgs=10V | Qg(nC) | Ciss(pF) |
| GT100N20TT | TOLT | NO | 200 | 130 | 8 | 10 | 76 | 4900 |
Applications:
Motor Drives Power Tools Industrial Power Systems DC-DC Converters
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