80V N-Channel TOLL-8L MOSFET: High Power, Low Rdson) 0.85mΩ
2025-03-21
In the era of high-efficiency power systems, delivering both performance and compactness is non-negotiable. Goford Semiconductor introduces the GTO11N08TL, an 80V N-Channel MOSFET engineered for ultra-low R<sub>DS(on)</sub>, high-current handling, and space-saving TOLL-8L packaging, redefining efficiency in power-dense designs.
Product Highlights:
80V Voltage Rating: Robust performance for industrial and automotive power systems.
Ultra-Low Rds(on): As low as 1.1mΩ at VGS=10V, slashing conduction losses and maximizing energy efficiency.
Optimized TOLL-8L Package: Compact footprint with superior thermal performance for efficient heat dissipation.
Avalanche Resilience: Single-pulse avalanche energy up to 1800mJ, ensuring reliability in surge-prone environments.
High Current Capacity: Supports 350A continuous current and 1400A pulsed current, ideal for heavy-load applications.
Product Parametrics:
| Part Number | Package | ESD | Vds(V) | Id(A) | Rds(on)mΩ(typ) @Vgs=10V | Rds(on)mΩ(max)@Vgs=10V | Qg(nC) | Ciss(pF) |
| GT011N08TL | TOLL-8L | NO | 80 | 350 | 0.85 | 1.1 | 163 | 13300 |
Applications:
Electric Vehicle Systems Renewable Energy Industrial Motor Control Server/Data Center PSUs
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80V N-Channel TOLL-8L MOSFET: High Power, Low Rdson) 0.85mΩ