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80V N-Channel TOLL-8L MOSFET: High Power, Low Rdson) 0.85mΩ

2025-03-21

In the era of high-efficiency power systems, delivering both performance and compactness is non-negotiable. Goford Semiconductor introduces the GTO11N08TL, an 80V N-Channel MOSFET engineered for ultra-low R<sub>DS(on)</sub>, high-current handling, and space-saving TOLL-8L packaging, redefining efficiency in power-dense designs.



Product Highlights:

 80V Voltage Rating: Robust performance for industrial and automotive power systems.

 Ultra-Low Rds(on): As low as 1.1mΩ at VGS=10V, slashing conduction losses and maximizing energy efficiency.

 Optimized TOLL-8L Package: Compact footprint with superior thermal performance for efficient heat dissipation.

 Avalanche Resilience: Single-pulse avalanche energy up to 1800mJ, ensuring reliability in surge-prone environments.

 High Current Capacity:  Supports 350A continuous current and 1400A pulsed current, ideal for heavy-load applications.







Product Parametrics:

Part NumberPackageESDVds(V)Id(A)

Rds(on)mΩ(typ)

@Vgs=10V

Rds(on)mΩ(max)@Vgs=10VQg(nC)Ciss(pF)
GT011N08TLTOLL-8LNO803500.851.116313300



Applications:


Electric Vehicle Systems                                        Renewable Energy                                          Industrial Motor Control                                Server/Data Center PSUs