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厌倦了热故障?GOFORD MOSFET为电动自行车设计带来革命性变化

2025-07-11

您知道吗?高达40%的电动车故障源于动力系统的热过载问题?

面对当今市场对高扭矩的需求以及电池电压普遍超过80V的现状,传统MOSFET已力不从心。这正是选择GOFORD新一代沟槽技术MOSFET的明智之选——它们可将发热降低高达30%,并实现缩小50%的紧凑设计。



关键应用领域:

1.电机控制(高扭矩,80V+系统)

l 超低导通电阻 RDS(on):显著降低陡坡爬升时的导通损耗;

l 100%雪崩测试:确保在再生制动尖峰冲击下提供浪涌保护;

l TOLL封装:大幅降低热阻 (RθJC = 0.32°C/W),使运行温度比竞品低22%。


Part Number

Package

ESD

Vds(V)

Id(A)

Rds(on)mΩ(typ)
@Vgs=10V

Rds(on)mΩ(typ)
@Vgs=4.5V

Qg(nC)

Ciss(pF)

GC040N65QFTO-247NO6507236/1584900
GC060N65QFTO-247NO6505045/1283395
GT070N15TATO-220NO1501404.7/895864
GT070N15MATO-263NO1501404.8/895850
GT015N10TLTOLL-8LNO1003651.15/26015000
GT015N10TLATOLL-8LNO1003651.2/26015500
GT023N10TLTOLL-8LNO1003301.6/1215747
GT023N10TLATOLL-8LNO1003301.6/1218747
GT020N10TLTOLL-8LNO1003001.65/16010600
GT020N10TLATOLL-8LNO1003001.65/16010600
GT020N10MATO-263NO1002362.1/16010800
GT048N10TATO-220NO1001104.45.2493220
GT011N08TLATOLL-8LNO803830.85/16313300
GT011N08TLTOLL-8LNO803500.85/16313300
GT030N08MTO-263NO801552.63755100


2.LED照明(低压高效

l 负电压运行(P沟道):简化电路设计;

l 先进可靠的封装:能够承受各种恶劣天气条件。


Part Number

Package

ESD

Vds(V)

Id(A)

Rds(on)mΩ(typ)
@Vgs=10V

Rds(on)mΩ(typ)
@Vgs=4.5V

Qg(nC)

Ciss(pF)

G040P04MATO-263NO-40-1802.93.720614983
G75P04KATO-252NO-40-8056.7106675
45P40ATO-252NO-40-50101473280
G65P06D5ADFN5*6-8LNO-60-71131575350
G20P06KATO-252NO-60-2031/46272
GT095N10KATO-252NO100558.510.5541660
G450N10D5ADFN5*6-8LNO100353639262161
GT110N06D5ADFN5*6-8LNO60459.512.5311202
20N06ATO-252NO60252123251609
G800N06HASOT-223NO605.565706457
G050N06LLASOT-23-6LNO605303526.455
G60N04KTO-252NO40605.57.5292014
GC040N65QFTO-247NO6507236/1584900
GC060N65QFTO-247NO6505045/1283395
GT070N15TATO-220NO1501404.7/895864
GT070N15MATO-263NO1501404.8/895850
GT015N10TLTOLL-8LNO1003651.15/26015000
GT015N10TLATOLL-8LNO1003651.2/26015500
GT023N10TLTOLL-8LNO1003301.6/1215747
GT023N10TLATOLL-8LNO1003301.6/1218747
GT020N10TLTOLL-8LNO1003001.65/16010600
GT020N10TLATOLL-8LNO1003001.65/16010600
GT020N10MATO-263NO1002362.1/16010800
GT048N10TATO-220NO1001104.45.2493220


3. 电池管理系统 (BMS)(关键安全与精度)

l 通过AEC-Q101认证:具备汽车级可靠性;

lTOLL-8L紧凑设计 (10.38mm):适用于空间受限的BMS电路板;

l <1μA 漏电流:有助于保护整体电池寿命。


Part Number

Package

ESD

Vds(V)

Id(A)

Rds(on)mΩ(typ)
@Vgs=10V

Rds(on)mΩ(typ)
@Vgs=4.5V

Qg(nC)

Ciss(pF)

GT2K0P20MTO-263NO-200-19166179703400
GT2K0P20MATO-263NO-200-19166179703400
GT2K0P20KTO-252NO-200-18180190703400
GT2K0P20KATO-252NO-200-18180190703400
G450P15MTO-263NO-150-7033
1777661
GT600P15MLTO-263NO-150-5452541726300
GT600P15MLATO-263NO-150-5452541726300
G900P15KTO-252NO-150-3565
273918
G900P15MTO-263NO-150-3562
274056
G900P15KATO-252NO-150-3565
273918
GT880P15KTO-252NO-150-307991463350
GT880P15MTO-263NO-150-307890463350
GT1K2P15KTO-252NO-150-2790100863275
GT1K2P15MTO-263NO-150-2795103863186
GT1K2P15KATO-252NO-150-2790100863275
GT880P15KBTO-252NO-150-2695110463350
GT880P15MBTO-263NO-150-2690105463350
G1K6P15KTO-252NO-150-24132
221986
GT2K2P15KTO-252NO-150-13195
271200
G2K8P15KTO-252NO-150-12271
11953
G6K8P15KEATO-252YES-150-12570
111550
GT2K6P15KTO-252NO-150-11205
361400
GT2K6P15MTO-263NO-150-11205
281400
G20P10KETO-252YES-100-2094
703354
GT400P10KTO-252NO-100-352940413128
G500P03LLSOT-23-6LNO-30-4.6408513680
2301SOT-23NO-20-3
568550
2301ASOT-23NO-20-3
568.5640
GT043N15TLTOLL-8LNO1502023.8
75.35007
GT043N15TLATOLL-8LNO1502023.8
75.35007
GT010N10TLATOLL-8LNO1004001.15
22013200
GT010N10TLTOLL-8LNO1003701.15
22013200
GT015N10TLTOLL-8LNO1003651.15
26015000
GT015N10TLATOLL-8LNO1003651.2
26015500
GT020N10TLTOLL-8LNO1003001.65
16010600
GT020N10TLATOLL-8LNO1003001.65
16010600
GT1K2N10ISOT-23NO1003.3911354.2145
G1002SOT-23NO100221526010535
G1002ASOT-23NO100221526010535
G2K3N10HSOT-223NO100219023013434
G2K3N10HASOT-223NO100219023013434
GT011N08TLATOLL-8LNO803830.85
16313300
GT011N08TLTOLL-8LNO803500.85
16313300
G20N03D2DFN2*2-6LNO30912.52120860
2302SOT-23NO204.5
2412380
2302ASOT-23NO204.3
274356


4.智能灯光显示系统 (Intellight)(低功耗智能)

l4.5V下仅9mΩ的导通电阻 Rds(on):实现高效的低压运行。


Part Number

Package

ESD

Vds(V)

Id(A)

Rds(on)mΩ(typ)
@Vgs=10V

Rds(on)mΩ(typ)
@Vgs=4.5V

Qg(nC)

Ciss(pF)

GT1K2P15KTO-252NO-150-271389010086
GT1K2P15KATO-252NO-150-271389010086
GT2K6P15KTO-252NO-150-1158205
36
G12P10KETO-252YES-100-124517819232
G12P10KEATO-252YES-100-124517819232
G60N04KATO-252NO40605.59292014
G60N04KTO-252NO40605.57.5292014



5.充电器

l高压超结MOSFET:在TO-247封装中,10V下导通电阻 (rdson) 可低至36毫欧 (36mΩ),具有卓越的电磁干扰性能和可靠性。


Part Number

Package

ESD

Vds(V)

Id(A)

Rds(on)mΩ(typ)
@Vgs=10V

Rds(on)mΩ(typ)
@Vgs=4.5V

Qg(nC)

Ciss(pF)

GC040N65QFTO-247NO6507236

1584900
GC060N65QF
TO-247NO6505045
128
3395
GC085N65QFTO-247NO6504072
762350
GC085N65FFTO-220FNO6503472
762350
GC125N65QFTO-247NO65027103
52
1580
GC20N65FTO-220FNO65020148
391603
GC180N65FTO-220FNO65020145
361150